Polycrystalline Silicon Material

ABSTRACT

A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 5 [ppta]≤(Ca1+Ca2)−(Cd1+Cd2)≤26 [ppta].

TECHNICAL FIELD

The present invention relates to a polycrystalline silicon material. Inparticular, the present invention relates to a polycrystalline siliconmaterial for producing silicon single crystal having a high resistivity.

BACKGROUND ART

Silicon single crystal is an extremely important material in industry,and is used as semiconductor wafers, solar cells, high-frequencydevices, substrates of various elements such as sensors and the like.When the silicon single crystal is used as the substrate of variouselements, the substrate is required to be silicon single crystal havinga high resistivity in order to suppress the movement of electric chargesin the substrate. For example, as described in Patent Literature 1, asubstrate having a resistivity of several thousand Ωcm is required.

The silicon single crystal is obtained as a silicon single crystal ingotby bringing a seed crystal into contact with a silicon melt obtained bymelting a polycrystalline silicon material. A Czochralski (CZ) methodand a floating zone (FZ) method are known as methods for obtaining thesilicon single crystal ingot.

Conventionally, the silicon single crystal having a high resistivity hasbeen produced by the FZ method. However, it is difficult to produce alarge-diameter ingot by the FZ method, which is disadvantageous in termsof cost.

Therefore, it has been attempted to produce the silicon single crystalhaving a high resistivity by the CZ method, which can relatively easilyproduce a large-diameter ingot having a diameter of 300 mm or more andis less expensive than the FZ method.

For example, Patent Literature 2 discloses that silicon single crystalhaving a high resistivity can be obtained by using a polycrystallinesilicon material in which a difference in impurity concentration(difference between a donor concentration and an acceptor concentration)in the polycrystalline silicon material is controlled within a specificrange.

However, a surface of the polycrystalline silicon material is usuallycontaminated, and various impurity elements are present on the surface.Such impurity elements include Dopant elements (donor elements andacceptor elements). A distinction is made between Dopant elementspresent on the surface of the polycrystalline silicon material (surfacedopant elements) and dopant elements present inside a bulk body of thepolycrystalline silicon material (bulk dopant elements).

However, When the polycrystalline silicon material is melted, thesurface dopant elements are contained in the silicon melt together withthe bulk dopant elements. Therefore, when pulling up the silicon singlecrystal, the surface dopant elements are incorporated into the siliconsingle crystal as the bulk dopant elements. As a result, the surfacedopant elements of the polycrystalline silicon material affect theresistivity of the silicon single crystal.

In particular, as the polycrystalline silicon material used in the CZmethod, a fragmentary raw material (a polycrystalline silicon chunk)obtained by crushing a polycrystalline silicon rod is used. Therefore, asurface area of the polycrystalline silicon material made of thepolycrystalline silicon chunk becomes much larger than a surface area ofthe rod-shaped polycrystalline silicon material used in the FZ method.Since an amount of the surface dopant elements is proportional to thesurface area, an effect of the surface dopant elements on theresistivity of the silicon single crystal is extremely large in the CZmethod.

Furthermore, a size of the polycrystalline silicon chunk in thepolycrystalline silicon material is not constant and has a predeterminedparticle size distribution. Since the surface area of thepolycrystalline silicon chunk corresponds to the size of thepolycrystalline silicon chunk, the amount of the surface dopant elementsvaries depending on the size of the polycrystalline silicon chunk.

Therefore, in production of the silicon single crystal having a highresistivity, techniques that focus not only on the bulk dopant elementsbut also on the surface dopant elements of the polycrystalline siliconmaterial are known. For example, Patent Literature 3 discloses that aconcentration of surface dopant elements and a concentration of bulkdopant elements in a polycrystalline silicon material are each setwithin a predetermined range. Further, Patent Literatures 4 and 5disclose that measuring concentrations of surface dopant elements andbulk dopant elements in a polycrystalline silicon material, and addingdopants so as to achieve the desired resistivity based on themeasurement results.

CITATION LIST Patent Literature

-   Patent Literature 1: JP-A-2017-69240-   Patent Literature 2: JP-A-2004-315336-   Patent Literature 3: JP-A-2013-151413-   Patent Literature 4: JP-A-2014-156376-   Patent Literature 5: JP-A-2018-90466

SUMMARY OF INVENTION Technical Problem

In recent years, there has been a demand for the silicon single crystalhaving a higher resistivity, for example, a resistivity of 10,000 Ωcm orhigher. In order to obtain such silicon single crystal having a veryhigh resistivity, it is preferable to adjust an amount of dopantelements contained in the polycrystalline silicon material withoutadding any dopant.

However, Patent Literature 2 does not suggest controlling theconcentration of the bulk dopant elements in the polycrystalline siliconmaterial, and simply discloses using a material in which the differencebetween the donor concentration and the acceptor concentration in thematerial are controlled within a specific range by combining variouspolycrystalline silicon materials. Moreover, no attention is paid to theconcentration of the surface dopant elements of the polycrystallinesilicon material.

Therefore, there is a problem that silicon single crystal having aconduction type opposite to a desired conduction type may be obtaineddepending on the concentration of the surface dopant elements.Alternatively, there is a problem that a desired resistivity cannot beobtained even with silicon single crystal having a desired conductiontype.

In the first place, an objective of Patent Literature 2 is to producesilicon single crystal having a resistivity of approximately 2,000 Ωcm.Even if the difference between the donor concentration and the acceptorconcentration in the polycrystalline silicon material is set within arange described in Patent Literature 2, it is not possible to producesilicon single crystal having a resistivity of, for example, 10,000 Ωcmor more.

Patent Literature 3 focuses on the concentration of the surface dopantelements and the concentration of the bulk dopant elements, but merelyspecifies respective concentration ranges. Therefore, there is a problemthat the silicon single crystal having a conduction type opposite to adesired conduction type may be obtained, depending on a magnituderelation between the donor concentration and the acceptor concentrationin the surface dopant elements, and the donor concentration and theacceptor concentration in the bulk dopant elements. Alternatively, thereis a problem that a desired resistivity cannot be obtained even if thesilicon single crystal has a desired conduction type.

Similar to Patent Literature 2, Patent Literatures 4 and 5 do notsuggest controlling the concentration of the surface dopant elements andthe concentration of the bulk dopant elements of the polycrystallinesilicon material and disclose adding a dopant to adjust a resistivity ofsilicon single crystal based on measurement results of the concentrationof the surface dopant elements and the concentration of the bulk dopantelements.

However, similar to Patent Literature 2, the objective of both PatentLiteratures 4 and 5 is to produce silicon single crystal having aresistivity of approximately several thousand Ωcm. Therefore, forexample, when attempting to obtain silicon single crystal having aresistivity of 10,000 Ωcm or higher by the method disclosed in PatentLiterature 4, an addition amount of the dopant must be minimal. There isa problem that an error becomes large in weighing such a minimaladdition amount of the dopant, and thus it is difficult to obtain adesired resistivity.

Moreover, in these patent literatures, intended dopant elements are,specifically, only phosphorus (P) for a donor element, and only boron(B) for an acceptor element. For these reasons, a desired value of theresistivity of the silicon single crystal obtained without adding thedopant in this way cannot be obtained. As a result, unless theabove-mentioned dopant is added and adjusted, it is difficult to controlnot only the conduction type but also the resistivity to a desired highvalue.

The present invention is made in view of such a circumstance, and anobject thereof is to provide a polycrystalline silicon material forproducing silicon single crystal having a conduction type of p-type andaccurately exhibiting a desired high resistivity without adding adopant.

Solution to Problem

The present inventors have found that in a polycrystalline siliconmaterial, by taking into consideration all acceptors and donors thataffect a resistivity and making a balance therebetween within apredetermined range, silicon single crystal having a desired conductiontype and accurately exhibiting a desired resistivity can be obtainedeven if the desired resistivity is high.

In order to achieve the above-mentioned object, aspects of the presentinvention are as follows.

[1] A polycrystalline silicon material for producing silicon singlecrystal, containing: a plurality of polycrystalline silicon chunks, inwhich

assuming that a total concentration of donor elements present inside abulk body of the polycrystalline silicon material is Cd1 [ppta], a totalconcentration of acceptor elements present inside the bulk body of thepolycrystalline silicon material is Ca1 [ppta], a total concentration ofthe donor elements present on a surface of the polycrystalline siliconmaterial is Cd2 [ppta], and a total concentration of the acceptorelements present on the surface of the polycrystalline silicon materialis Ca2 [ppta],

Cd1, Ca1, Cd2, and Ca2 satisfy a relation 5[ppta]≤(Ca1+Ca2)−(Cd1+Cd2)≤26 [ppta].

[2] The polycrystalline silicon material according to [1], in which

assuming that a total weight of the polycrystalline silicon chunkscontained in the polycrystalline silicon material is 100%, a weight ofpolycrystalline silicon chunks having a maximum length of 10 mm or moreand 45 mm or less is 90% or more.

[3] The polycrystalline silicon material according to [1], in which

assuming that a total weight of the polycrystalline silicon chunkscontained in the polycrystalline silicon material is 100%, a weight ofpolycrystalline silicon chunks having a maximum length of 20 mm or moreand 70 mm or less is 90% or more.

[4] The polycrystalline silicon material according to [1], in which

assuming that a total weight of the polycrystalline silicon chunkscontained in the polycrystalline silicon material is 100%, a weight ofpolycrystalline silicon chunks having a maximum length of 60 mm or moreand 100 mm or less is 90% or more.

Advantageous Effects of Invention

According to the present invention, it is possible to provide apolycrystalline silicon material for producing silicon single crystalhaving a conduction type of p-type and accurately exhibiting a desiredhigh resistivity without adding a dopant.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a process diagram of a method for producing a polycrystallinesilicon material according to the present embodiment and a method forproducing silicon single crystal using the polycrystalline siliconmaterial according to the present embodiment.

DESCRIPTION OF EMBODIMENTS

Hereinafter, the present invention will be described in detail in thefollowing order based on a specific embodiment.

1. Polycrystalline Silicon Material 2. Method for ProducingPolycrystalline Silicon Material

2.1. Production of Polycrystalline Silicon Rod

2.2. Crushing of Polycrystalline Silicon Rod

2.3. Washing of Polycrystalline Silicon Crushed Product

2.4. Polycrystalline Silicon Material

3. Dopant Concentration Control of Polycrystalline Silicon Material

3.1. Bulk Dopant Concentration Control of Polycrystalline SiliconMaterial

-   -   3.1.1. Measurement of Bulk Dopant Concentration

3.2. Surface Dopant Concentration Control of Polycrystalline SiliconMaterial

-   -   3.2.1. Measurement of Surface Dopant Concentration

4. Summary of Embodiment 1. Polycrystalline Silicon Material

A polycrystalline silicon material according to the present embodimentcontains a plurality of polycrystalline silicon chunks. Thepolycrystalline silicon chunks are obtained by washing a polycrystallinesilicon crushed product obtained by crushing a polycrystalline siliconrod produced by a known method.

The polycrystalline silicon material according to the present embodimentis suitably used for producing silicon single crystal having aconduction type of p-type. When carriers present in the silicon singlecrystal are positive holes, the conduction type is p-type, and when thecarriers are free electrons, the conduction type is n-type.

Examples of acceptor elements that supply the positive holes in thesilicon single crystal include boron (B), aluminum (Al), gallium (Ga),and indium (In). Examples of donor elements that supply the freeelectrons include phosphorus (P), arsenic (As), and antimony (Sb).Therefore, in the silicon single crystal having a conduction type ofp-type, majority carriers that carry electric charges are the positiveholes.

Therefore, in order to produce the silicon single crystal having aconduction type of p-type, in the present embodiment, by considering alldopants (the acceptor elements and the donor elements) present in thepolycrystalline silicon material used as a raw material for the siliconsingle crystal, making an acceptor element concentration higher than adonor element concentration, and resulting in the majority carriers aspositive holes, the silicon single crystal having a conduction type ofp-type can be easily obtained.

Meanwhile, a resistivity of the silicon single crystal having aconduction type of p-type corresponds to the acceptor elementconcentration, that is, the number of carriers in the silicon singlecrystal. When the acceptor element concentration is high, theresistivity is low since the number of the positive holes as carriers islarge. Therefore, in order to obtain silicon single crystal having ahigh resistivity, it is necessary to reduce the acceptor elementconcentration.

However, the present inventors focused on the fact that the acceptorelement concentration does not have to be a total concentration of theacceptor elements present in the silicon single crystal, but aneffective acceptor element concentration that actually contributes tothe resistivity. When the acceptor elements and the donor elements arepresent in the silicon single crystal, carriers derived from theacceptor elements (positive holes) and carriers derived from the donorelements (free electrons) cancel each other out. Therefore, from aviewpoint of the number of carriers, a difference between the acceptorelement concentration and the donor element concentration becomes theeffective acceptor element concentration, and the number of effectivecarriers corresponding to the effective acceptor element concentrationis reflected in the resistivity.

In other words, by setting the effective acceptor element concentrationwithin a predetermined range, the resistivity of the silicon singlecrystal having a conduction type of p-type can be set within apredetermined range.

Here, in a silicon single crystal pulling step, dopant contaminationcaused by external factors other than the polycrystalline siliconmaterial can be reduced to an extremely small amount. Therefore, inorder to control the effective acceptor element concentration in thesilicon single crystal, as described above, it is sufficient to considerall the dopants (the acceptor elements and the donor elements) presentin the polycrystalline silicon material used as the raw material of thesilicon single crystal, and to control a concentration thereof. Theacceptor elements and the donor elements present in the polycrystallinesilicon material consist of a dopant (bulk dopant) present inside a bulkbody of the polycrystalline silicon material and a dopant (surfacedopant) present on a surface of the polycrystalline silicon material.

Therefore, in the present embodiment, a difference between a totalconcentration of the acceptor elements present inside the bulk body andon the surface of the polycrystalline silicon material and a totalconcentration of the donor elements present inside the bulk body and onthe surface of the polycrystalline silicon material is controlled withina specific range.

Specifically, assuming that a total concentration of the donor elementspresent inside the bulk body of the polycrystalline silicon material isCd1 [ppta], a total concentration of the acceptor elements presentinside the bulk body of the polycrystalline silicon material is Ca1[ppta], a total concentration of the donor elements present on thesurface of the polycrystalline silicon material is Cd2 [ppta], and atotal concentration of the acceptor elements present on the surface ofthe polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, andCa2 satisfy the following relation.

5 [ppta]≤(Ca1+Ca2)−(Cd1+Cd2)≤26 [ppta]

Here, the above total concentration (Cd2) of the donor elements andtotal concentration (Ca2) of the acceptor elements on the surface of thepolycrystalline silicon material are not indicated as an amount of thedonor elements and an amount of the acceptor elements on the surface ofthe polycrystalline silicon material with respect to the surface of thepolycrystalline silicon material. These are values indicating an amountof each surface dopant element as a value with respect to the atomicweight of silicon of the polycrystalline silicon material, as is clearfrom calculation formulas described later.

By using the polycrystalline silicon material in which the acceptorelement concentration and the donor element concentration are controlledwithin the above range, a dopant concentration in the bulk of theproduced silicon single crystal substantially reflects a concentrationderived from the polycrystalline silicon material. Therefore, bycontrolling the acceptor element concentration and the donor elementconcentration in the polycrystalline silicon material as describedabove, the produced silicon single crystal has a desired conduction typeand can accurately exhibit a desired resistivity.

An upper limit of 26 [ppta] in the above relation corresponds to atheoretical acceptor element concentration in silicon single crystalshowing a resistivity of approximately 10,000 [Ωcm]. That is, in theabove relation, by setting the upper limit of the effective acceptorelement concentration in the polycrystalline silicon material to 26[ppta], it is possible to obtain silicon single crystal having aconduction type of p-type and a resistivity of approximately 10,000[Ωcm].

On the other hand, a lower limit of 5 [ppta] in the above relationcorresponds to a theoretical acceptor element concentration in siliconsingle crystal showing a resistivity of approximately 50,000 [Ωcm].Since silicon single crystal having a resistivity of more than 50,000[Ωcm]exhibits a dopant concentration at a level close to that of anintrinsic semiconductor, a magnitude relation between the acceptorelement concentration and the donor element concentration may bereversed due to slight changes in the acceptor element concentration orthe donor element concentration. As a result, silicon single crystalhaving a conduction type opposite to a desired conduction type, that is,n-type, may be obtained.

From a viewpoint of more reliably obtaining a P-type silicon singlecrystal having a resistivity of 10,000 [Ωcm] or more, it is morepreferable that Cd1, Ca1, Cd2, and Ca2 satisfy the following relation.

10 [ppta]≤(Ca1+Ca2)−(Cd1+Cd2)≤20 [ppta]

During pulling up of the silicon single crystal, phosphorus, which is adonor element, and boron, which is an acceptor element, are incorporatedinto the silicon single crystal. Phosphorus and boron have differentsegregation coefficients. Since boron having a segregation coefficientof 0.8 hardly segregates into the silicon single crystal, a boronconcentration in the silicon single crystal does not change much betweenan initial stage of the pulling up and a late stage of the pulling up.On the other hand, phosphorus having a segregation coefficient of 0.35is more likely to segregate than boron, and although a phosphorusconcentration in the silicon single crystal is low at the initial stageof the pulling up, the phosphorus concentration in the silicon singlecrystal increases in the late stage of the pulling up. As a result, inthe pulled-up silicon single crystal, the magnitude relation between theacceptor element concentration and the donor element concentration maybe reversed in a portion obtained at the initial stage of the pulling upand a portion obtained at the late stage of the pulling up, and theconduction type may be reversed. In order to prevent the abovecircumstance, in the present embodiment, the lower limit is set to 5[ppta] in the above relation.

In the present embodiment, values of Cd1, Ca1, Cd2, and Ca2 are notparticularly limited as long as the effective acceptor elementconcentration satisfies the above relation. That is, control of absolutevalues of a bulk dopant concentration and a surface dopant concentrationin the polycrystalline silicon material is not so important, and it isimportant to control the bulk dopant concentration and the surfacedopant concentration in cooperation with each other.

Ca1 is usually in a range of 1 [ppta] to 10 [ppta], and from theviewpoint of reliably obtaining the P-type silicon single crystal havinga resistivity of 10,000 [Ωcm] or more, Ca1 is preferably in a range of 1[ppta] to 4 [ppta]. Ca2 is usually in a range of 1 [ppta] to 100 [ppta],and for the same reason as above, Ca2 is preferably in a range of 10[ppta] to 90 [ppta]. Meanwhile, Cd1 is usually in a range of 1 [ppta] to80 [ppta], and from the viewpoint of reliably obtaining the P-typesilicon single crystal having a resistivity of 10,000 [Ωcm] or more, Cd1is preferably in a range of 10 [ppta] to 60 [ppta]. Cd2 is usually in arange of 1 [ppta] to 50 [ppta], and for the same reason as above, Cd2 ispreferably in a range of 1 [ppta] to 30 [ppta].

2. Method for Producing Polycrystalline Silicon Material

A method for producing the polycrystalline silicon material according tothe present embodiment is not particularly limited, and any known methodsuch as a Siemens method or a fluidized bed method may be used. In thepresent embodiment, a method for producing the polycrystalline siliconmaterial by the Siemens method will be described with reference to aprocess diagram shown in FIG. 1.

(2.1. Production of Polycrystalline Silicon Rod)

In the Siemens method, first, a silicon core wire connected to a carbonelectrode is placed inside a reaction vessel, the silicon core wire isenergized, and the silicon core wire is heated to a temperature equal toor higher than a precipitation temperature of silicon. As shown in FIG.1, a silane compound gas and a reducing gas are supplied as raw materialgases to the heated silicon core wire, and polycrystalline silicon isprecipitated on the silicon core wire by a chemical vapor depositionmethod to obtain a polycrystalline silicon rod.

Examples of the silane compound include monosilane, trichlorosilane,silicon tetrachloride, monochlorosilane, and dichlorosilane. In thepresent embodiment, trichlorosilane is preferred. As the reducing gas,hydrogen gas is usually used.

The obtained polycrystalline silicon rod contains impurity elementsderived from raw material gases (trichlorosilane and hydrogen) and theelectrode. Such impurity elements include dopant elements such as boron(B), aluminum (Al), phosphorus (P), and arsenic (As). That is, suchdopant elements are bulk dopant elements contained in a bulk of thepolycrystalline silicon rod.

In the present embodiment, bulk dopant concentration control, which willbe described later, is performed to control concentrations (Cd1 and Ca1)of the bulk dopant elements of the polycrystalline silicon rod within apredetermined range.

(2.2. Crushing of Polycrystalline Silicon Rod)

As shown in FIG. 1, the obtained polycrystalline silicon rod is cut andcrushed to a predetermined size to obtain a chunk-like polycrystallinesilicon crushed product. Specifically, the polycrystalline silicon rodis crushed into a chunk by a hammer made of a hard metal such astungsten carbide, a crusher such as a jaw crusher, or the like. Impurityelements due to a material of the hammer or the crusher, environmentduring the crushing, and the like adhere to a surface of thepolycrystalline silicon crushed product after crushing, and the surfaceis thus contaminated.

Such impurity elements may include the above-mentioned dopant elements.That is, surface dopant elements may be present on the surface of thepolycrystalline silicon crushed product. In the presence of the surfacedopant elements, during production of the silicon single crystal from asilicon melt obtained by melting the polycrystalline silicon crushedproduct, the surface dopant elements of the polycrystalline siliconcrushed product are incorporated into the silicon single crystal andpresent as the bulk dopant elements in the silicon single crystal, whichgreatly influences the conductivity type and the resistivity of thesilicon single crystal.

(2.3. Washing of Polycrystalline Silicon Crushed Product)

Therefore, in the present embodiment, as shown in FIG. 1, in order toreduce surface contamination of the polycrystalline silicon crushedproduct caused by the crushing of the polycrystalline silicon rod, thepolycrystalline silicon crushed product is subjected to washing (wettreatment). Specifically, first, the polycrystalline silicon crushedproduct is brought into contact with a solution containing hydrofluoricacid, nitric acid, and the like, and a surface portion of thepolycrystalline silicon crushed product is eluted by etching. Byperforming such a treatment, the surface dopant elements adhering duringcrushing can be separated from the polycrystalline silicon crushedproduct. After etching, the polycrystalline silicon crushed product isrinsed with ultrapure water or the like and dried.

(2.4. Polycrystalline Silicon Material)

In the present embodiment, as shown in FIG. 1, surface dopantconcentration control, which will be described later, is performed onthe polycrystalline silicon crushed product after washing to obtain thepolycrystalline silicon material.

In the present embodiment, it is preferable that a weight ofpolycrystalline silicon chunks having a maximum length of 10 mm or moreand 45 mm or less is 90% or more when a total weight of thepolycrystalline silicon chunks contained in the polycrystalline siliconmaterial satisfying the above effective acceptor element concentrationis 100%. It is also preferable that a weight of polycrystalline siliconchunks having a maximum length of 20 mm or more and 70 mm or less is 90%or more when the total weight of the polycrystalline silicon chunkscontained in the polycrystalline silicon material satisfying the aboveeffective acceptor element concentration is 100%. It is also preferablethat a weight of polycrystalline silicon chunks having a maximum lengthof 60 mm or more and 100 mm or less is 90% or more when the total weightof the polycrystalline silicon chunks contained in the polycrystallinesilicon material satisfying the above effective acceptor elementconcentration is 100%.

The surface dopant element concentration is taken into consideration inthe above-mentioned effective acceptor element concentration. Thesurface dopant element concentration depends on a surface area of thepolycrystalline silicon material. For example, compared to the casewhere the particle size of the polycrystalline silicon chunk thatconstitutes the polycrystalline silicon material is small and the casewhere the particle size of the polycrystalline silicon chunk is large,when the polycrystalline silicon material has the same weight, thesmaller particle size of the polycrystalline silicon chunk increases thesurface area of the polycrystalline silicon material (the total surfacearea of the polycrystalline silicon chunks). That is, even if thepolycrystalline silicon material has the same weight, the smaller theparticle size, the greater the adhesion amount of surface dopantelements is likely to be. Therefore, the surface dopant concentrationbecomes larger than when the particle size is large, resulting in moredifficulty in controlling the conduction type of p-type and achievingthe desired high resistivity with precision.

However, in the present embodiment, as will be described later, thesurface dopant concentration is controlled in consideration of theparticle diameter of the polycrystalline silicon material. As a result,as described above, even when the particle diameters of thepolycrystalline silicon chunks constituting the polycrystalline siliconmaterials are different, the effective acceptor element concentration inthe polycrystalline silicon material satisfies the above relation. Froma viewpoint of more remarkably achieving this effect, thepolycrystalline silicon material is more preferably constituted bychunks having a small particle diameter and a large surface area.Specifically, among those polycrystalline silicon chunks having theabove-mentioned particle diameters, it is particularly preferable thatthe weight of the polycrystalline silicon chunk having a maximum lengthof 10 mm or more and 45 mm or less is 90% or more when the total weightof the polycrystalline silicon chunks contained in the polycrystallinesilicon material is 100%.

Although etching the polycrystalline silicon crushed product caneliminate the effects of surface contamination until the polycrystallinesilicon rods are crushed, the surface of the polycrystalline siliconmaterial may again be contaminated with dopant elements due to thestorage environment and other factors until the polycrystalline siliconmaterial is used.

Therefore, in order to reduce such surface contamination, as shown inFIG. 1, the polycrystalline silicon material after washing is usuallyfilled in a predetermined amount in a packaging bag made of a resin suchas polyethylene, and the packaging bag is sealed. After thepolycrystalline silicon material is stored in a sealed state, thepackaging bag is transported to a clean room where a silicon singlecrystal production device has been installed, and the packaging bag isopened, and the polycrystalline silicon material is taken out and filledin a crucible or a recharge tube.

3. Dopant Concentration Control of Polycrystalline Silicon Material

In the present embodiment, the bulk dopant concentrations (Cd1 and Ca1)and the surface dopant concentrations (Cd2 and Ca2) in thepolycrystalline silicon material are controlled so as to satisfy theabove relation.

In the present embodiment, the bulk dopant concentration in thepolycrystalline silicon material is a concentration of dopants containedinside the bulk body of the polycrystalline silicon rod after the bulkdopant concentration control, as shown in FIG. 1. The surface dopantconcentration in the polycrystalline silicon material is a dopantconcentration after the surface dopant concentration control for thepolycrystalline silicon crushed product after washing (polycrystallinesilicon material), as shown in FIG. 1. After the surface dopantconcentration control, by quickly filling the packaging bag with thepolycrystalline silicon material and sealing the packaging bag, thesurface dopant concentration after the surface dopant concentrationcontrol is maintained until the use of the polycrystalline siliconmaterial.

The bulk dopant concentration can be controlled by a purity of the rawmaterial gas during the production of the polycrystalline silicon rod, apurity of the material constituting the electrode, a material of aprecipitation reactor, temperature, and the like. The bulk dopantconcentration does not change until the polycrystalline silicon materialis obtained from the polycrystalline silicon rod. Therefore, by firstcontrolling the bulk dopant concentration to a predetermined value andthen performing an operation of controlling the surface dopantconcentration, it becomes easy for the bulk dopant concentration and thesurface dopant concentration in the polycrystalline silicon material tosatisfy the above-mentioned relation.

(3.1. Bulk Dopant Concentration Control of Polycrystalline SiliconMaterial)

The acceptor elements in silicon are boron (B), aluminum (Al), gallium(Ga), and indium (In). However, since gallium and indium do notsubstantially present inside the bulk body of the polycrystallinesilicon rod, it is not necessary to consider concentrations thereof.Therefore, in the present embodiment, a bulk B concentration and a bulkAl concentration are considered as the bulk acceptor concentration.

The donor elements in silicon are phosphorus (P), arsenic (As), andantimony (Sb). However, since antimony do not substantially presentinside the bulk body of the polycrystalline silicon rod, it is notnecessary to consider a concentration thereof. Therefore, in the presentembodiment, a bulk P concentration and a bulk As concentration areconsidered as the bulk donor concentration.

The bulk P concentration in the polycrystalline silicon rod can becontrolled by, for example, adjusting a concentration of dichlorosilanein trichlorosilane, which is a raw material gas, as described inJP-A-H10-316413. For example, as described in JP-A-2004-250317,JP-A-2005-67979, JP-A-2012-91960, and the like, the bulk P concentrationcan be controlled by distilling chlorosilanes in the presence of liquidalkoxysilanes, or in the presence of an aldehyde compound having apredetermined structure.

A phosphorus concentration contained in the polycrystalline siliconmaterial can be controlled by the bulk P concentration, but if the bulkP concentration alone does not reach a predetermined phosphorusconcentration, a surface P concentration may be controlled by a methoddescribed later.

In order to control the bulk B concentration and the bulk Alconcentration in the polycrystalline silicon rod, it is necessary tocontrol the purity of trichlorosilane, which is the raw material gas ofthe polycrystalline silicon rod. However, when the bulk B concentrationand the bulk Al concentration are controlled, a bulk carbon (C)concentration and the bulk phosphorus (P) concentration also fluctuate.Therefore, in the present embodiment, the bulk B concentration and thebulk Al concentration are reduced as much as possible, and the acceptorelement concentration in the polycrystalline silicon material iscontrolled by controlling a surface B concentration and a surface Alconcentration.

the bulk B concentration, the bulk Al concentration and the bulk Asconcentration in the polycrystalline silicon rod can be controlled byusing purified chlorosilanes obtained by distilling chlorosilanes in thepresence of liquid alkoxysilanes or purified chlorosilanes obtained bydistilling chlorosilanes in the presence of an aldehyde compound havinga predetermined structure, as described in, for example,JP-A-2013-129592, JP-A-2004-250317, JP-A-2005-67979, andJP-A-2012-91960, as with the bulk P concentration.

(3.1.1. Measurement of Bulk Dopant Concentration)

In the present embodiment, the bulk dopant concentration is measuredaccording to JIS H0615. Specifically, a coring rod having an innerdiameter of 19 mm in a radial direction and including a silicon corewire is cut out with a drill from any position of a straight body of thepolycrystalline silicon rod to obtain a polycrystalline silicon rod forthe FZ method. The obtained polycrystalline silicon rod for the FZmethod is tapered, degreased and cleaned, and etched withnitrohydrofluoric acid. The etched polycrystalline silicon rod for theFZ method is single-crystallized by the FZ method.

In the obtained single crystal, resistance values in a long axisdirection of the single crystal are measured at 10 mm intervals, and anaverage resistivity is calculated. Next, in the single crystal, a singlecrystal is cut out from a position showing the same resistivity as thecalculated average resistivity. The cut single crystal is polished andthen etched with nitrohydrofluoric acid to obtain a sample forphotoluminescence (PL) measurement. The bulk dopant concentration of theobtained sample for PL measurement is measured by a PL device in a statewhere the sample is immersed in liquid helium.

(3.2. Surface Dopant Concentration Control of Polycrystalline SiliconMaterial)

Then, a method of controlling the concentration of the surface dopantelements will be described. Since the concentration of the surfacedopant elements may be controlled by controlling adhesion of the dopantelements to the surface of the polycrystalline silicon material, variousmethods can be adopted. A method shown below is an example of a methodfor controlling the concentration of the surface dopant elements, andthe concentration of the surface dopant elements may be controlled by amethod other than the method shown below.

In the present embodiment, the surface P concentration is considered asa surface donor element, and the surface B concentration and the surfaceAl concentration are considered as surface acceptor elements. A surfaceAs concentration is not controlled in consideration of worker safety,environmental impact, various laws and regulations, and the like. Sinceantimony, gallium, and indium are not usually present on the surface ofthe polycrystalline silicon material, and the surface dopantconcentration can be controlled by controlling other dopant elements,surface concentrations of these elements are not considered, as with thebulk concentrations. As described above, adhesion of the dopant elementsto the surface of the polycrystalline silicon material is likely tooccur when the polycrystalline silicon rod is crushed. The surfacedopant elements adhering during such crushing can be easily removed bywashing the polycrystalline silicon crushed product. Therefore, in thepresent embodiment, as shown in FIG. 1, the surface dopant concentrationcontrol is performed on the polycrystalline silicon crushed productafter washing.

The surface B concentration in the polycrystalline silicon material isproportional to a boron concentration in an atmosphere in contact withthe polycrystalline silicon material, an amount of air supplied, and anexposure time. The surface B concentration is inversely proportional tothe particle diameter of the polycrystalline silicon chunks constitutingthe polycrystalline silicon material, and proportional to the surfacearea of the polycrystalline silicon chunks.

Therefore, in an environment where air having a B concentration ofQ__(B) [ng/m³] is supplied at V [m³/min] to W [kg] of thepolycrystalline silicon crushed product after washing (polycrystallinesilicon material) having an average particle diameter of L [mm], thesurface B concentration Ca2__(B) [ppta] in the polycrystalline siliconmaterial when the polycrystalline silicon material is exposed to theabove environment for t [min] can be expressed by the followingequation.

$\begin{matrix}{{{Ca}\; 2_{\_ B}} = {k\; 1\frac{Q_{\_ B}{Vt}}{W}\left( \frac{50}{L} \right)^{2}}} & \left\lbrack {{Math}.\mspace{14mu} 1} \right\rbrack\end{matrix}$

“k1” in the equation is a proportional coefficient, and may becalculated by measuring a plurality of samples. The above equation isbased on a case where the average particle diameter of thepolycrystalline silicon material is 50 mm. Therefore, when the averageparticle diameter is smaller than 50 mm, the surface B concentrationincreases, and when the average particle diameter becomes larger than 50mm, the surface B concentration decreases, even if the exposurecondition to the air is the same.

Since the surface B concentration is usually controlled in a clean room,the air supply amount V of the air supplied to the clean room isconstant. The B concentration in the air can be measured by a knownmethod, for example, by impinger analysis defined in JACA No. 35A.

The surface Al concentration and the surface P concentration arecontrolled by using a polyethylene resin, which is a resin constitutingthe packaging bag filled with the polycrystalline silicon material. Forexample, JP-A-2017-56959 discloses that in order to keep the surface ofthe polycrystalline silicon material clean, a concentration of apredetermined dopant element contained in the polyethylene packaging bagused in the storage or transportation of the polycrystalline siliconmaterial is reduced. In contrast, in the present embodiment, bypositively utilizing the surface contamination of Al and P from thepolyethylene resin, the surface Al concentration and the surface Pconcentration are controlled to be predetermined values.

The surface Al concentration in the polycrystalline silicon material isproportional to an Al concentration in the polyethylene film and acontact area with the polyethylene film per unit weight of thepolycrystalline silicon material. The surface P concentration in thepolycrystalline silicon material is proportional to an amount ofphosphoric acid ester in the polyethylene film and a contact area withthe polyethylene film per unit weight of the polycrystalline siliconmaterial.

Therefore, in the present embodiment, the polycrystalline siliconmaterial is brought into contact with the polyethylene film in a cleanroom environment for controlling the surface B concentration. In thiscase, in order to prevent the surface of the polycrystalline siliconmaterial from being contaminated by elements other than Al and P, it ispreferable to cover a bottom surface and side surfaces of thepolycrystalline silicon material with the polyethylene film as aprotective covering.

The present inventors have found that with respect to the surface Alconcentration and the surface P concentration, the influence of theaverage particle diameter of the polycrystalline silicon material and acontact time with the polyethylene film can be ignored.

The polyethylene resin often contains catalyst-derived Al componentssuch as organoaluminum, aluminoxane, and aluminum chloride. When thepolycrystalline silicon material comes into contact with thepolyethylene resin, Al contained in the polyethylene resin adheres tothe surface of the polycrystalline silicon material.

Since a content of Al contained in the polyethylene resin depends onpolyethylene pellets as a raw material, a concentration of Al containedin the polyethylene resin can be controlled. Therefore, assuming that acontact area between the polyethylene film and the polycrystallinesilicon material when the polycrystalline silicon material W [kg] isplaced on the polyethylene film having an Al concentration of Q__(Al)[ng/cm²] is S [cm²], the surface Al concentration Ca2__(Al) [pptw] inthe polycrystalline silicon material can be expressed by the followingequation.

$\begin{matrix}{{{Ca}\; 2_{\_{Al}}} = {k2Q_{\_{Al}}\frac{S}{W}}} & \left\lbrack {{Math}.\mspace{14mu} 2} \right\rbrack\end{matrix}$

“k2” in the equation is a proportional coefficient, and may becalculated by measuring a plurality of samples. The Al concentrationQ__(Al) [ng/cm²] in the polyethylene film is obtained by heat-sealingthe polyethylene film into a bag shape so that a surface in contact withthe polycrystalline silicon material becomes the inside, adding a diluteacid such as hydrochloric acid and nitric acid to extract polyethylene,and then performing quantification by ICP-MS. The contact area Scorresponds to an area of the polyethylene film when the polycrystallinesilicon material is placed on a planar polyethylene film without gaps.

Phosphoric acid esters are added as additives to the polyethylene resinfor applications such as plasticizers and antioxidants. When thepolycrystalline silicon material comes into contact with thepolyethylene resin, phosphorus generated by the phosphoric acid estersadheres to the surface of the polycrystalline silicon material. Since anamount of phosphorus in the polyethylene resin depends on an amount ofthe phosphoric acid esters, the amount of phosphorus contained in thepolyethylene resin can be controlled.

Therefore, assuming that the contact area between the polyethylene filmand the polycrystalline silicon material is S [cm²] when apolycrystalline silicon material W₃ [kg] is placed on the polyethylenefilm in which a phosphoric acid ester W₂ [kg] is added to polyethylenepellets W₁ [kg], the surface P concentration (Ca2__(P)) [ppta] in thepolycrystalline silicon material can be expressed by the followingequation.

$\begin{matrix}{{{Ca}\; 2_{\_ P}} = {k\; 3\frac{W_{2}}{W_{1}}\frac{S}{W_{3}}}} & \left\lbrack {{Math}.\mspace{14mu} 3} \right\rbrack\end{matrix}$

“k3” in the equation is a proportional coefficient, and may becalculated by measuring a plurality of samples. The contact area Scorresponds to the area of the polyethylene film when thepolycrystalline silicon material is placed on a planar polyethylene filmwithout gaps.

As described above, after controlling the surface dopant concentration,polycrystalline silicon material is quickly filled in a packaging bagthat is substantially free of Al and P and the packaging bag is sealed,so that the surface dopant concentration after the surface dopantconcentration control is maintained until the polycrystalline siliconmaterial is used. Examples of the packaging bag substantially free of Aland P include a packaging bag made of low-density polyethylene (LDPE)that does not contain phosphoric acid esters as a plasticizer or anantioxidant, and the like. This is because LDPE can be synthesized byradical polymerization without using a catalyst containing an Alcomponent.

(3.2.1. Measurement of Surface Dopant Concentration)

The surface B concentration, the surface Al concentration, and thesurface P concentration in the polycrystalline silicon material aftercontrolling the surface dopant concentration by the above method can bemeasured by the method shown below.

First, in order to increase a lower limit of quantification, acomplex-forming agent for preventing volatilization of boron isdissolved in a nitrohydrofluoric acid solution containing high-puritynitric acid and high-purity hydrofluoric acid. Examples of thecomplex-forming agent include higher alcohols.

A predetermined amount of a polycrystalline silicon chunk is immersed inthe nitrohydrofluoric acid solution, and a surface layer portion iseluted by etching over a depth of 1 m or more, preferably 20 μm to 30μm, and then the polycrystalline silicon chunk is taken out. Then, afterevaporating the nitrohydrofluoric acid solution containing an eluate todryness at 100° C. or higher, and a residue is recovered by dissolvingit with high-purity nitric acid. The surface B concentration, thesurface Al concentration, and the surface P concentration may becalculated by using measured values obtained by quantifying therecovered residue by a double-focusing ICP-MS.

The surface As concentration can be measured by a method shown below.For example, as described in JP-A-2005-172512, after filling apredetermined amount of a polycrystalline silicon chunk into afluororesin container whose lid is provided with an outlet forcollecting impurity gas, a predetermined amount of high-purityhydrofluoric acid is added through the outlet to immerse thepolycrystalline silicon chunks with the high-purity hydrofluoric acidand then the container is sealed. After removing a natural oxide film asa surface layer, generated gas containing arsenic is collected from theoutlet. The surface As concentration may be calculated by using measuredvalues obtained by quantifying the collected gas using a double-focusingICP-MS equipped with a gas sample introduction system.

The surface B concentration, the surface Al concentration, the surface Pconcentration, and the surface As concentration are calculated accordingto the following equation using measured values of concentrations ofdopant elements quantified using the double-focusing ICP-MS.

$\begin{matrix}{Q = {\frac{\left( {C - C_{b}} \right)}{W}L\frac{M_{Si}}{M}}} & \left\lbrack {{Math}.\mspace{14mu} 4} \right\rbrack\end{matrix}$

Q: concentration [ppta] of each surface dopant element

C: measured value [ng/L]

Cb: operation blank value [ng/L]

W: weight [g] of polycrystalline silicon sample

L: nitric acid amount [L] used to recover residue

M_(Si): atomic weight of silicon

M: atomic weight of target dopant (B, Al, P, As)

The surface dopant concentrations (Ca2 and Cd2) [ppta] can be obtainedfrom the surface B concentration, the surface Al concentration, thesurface P concentration, and the surface As concentration obtained asdescribed above.

4. Summary of Embodiment

In the present embodiment, attention is paid to a fact that the totalconcentration of the bulk dopant elements present in the silicon singlecrystal largely depends on the total concentration of all dopantelements present in the polycrystalline silicon material used to producethe silicon single crystal.

The conduction type of the silicon single crystal is determined bywhether the free electrons or the positive holes are the majoritycarriers. The resistivity of the silicon single crystal corresponds tothe difference between the number of the majority carriers and thenumber of minority carriers.

Therefore, in the polycrystalline silicon material used for producingthe silicon single crystal, a bulk concentration and a surfaceconcentration of the acceptor elements and a bulk concentration and asurface concentration of the donor elements in the polycrystallinesilicon material are controlled so as to satisfy the above-mentionedrelation.

As a method for producing the silicon single crystal, for example, asshown in FIG. 1, a method for producing a silicon single crystal ingotusing the above-mentioned polycrystalline silicon material isexemplified. A CZ method is preferable as a method for obtaining thesilicon single crystal ingot. In the CZ method, the polycrystallinesilicon material contained in a crucible is heated to form a siliconmelt, and the silicon single crystal ingot obtained by bringing a seedcrystal into contact with the silicon melt is grown while being pulledup.

The obtained silicon single crystal ingot is usually in a rod shape andoften consists of a stably crystal-grown straight body having a constantdiameter, and a top portion (diameter expansion portion) and a tailportion (diameter reduction portion) located at both ends of thestraight body. A length of the straight body of the silicon singlecrystal ingot produced by the CZ method is usually 900 mm to 1800 mm,and a diameter thereof is usually 200 mm to 300 mm.

Dopants may be added when the polycrystalline silicon material is meltedto control the resistivity and the like. However, by using thepolycrystalline silicon material according to the present embodiment, asilicon single crystal ingot having high resistivity can be obtainedwithout adding any dopant when the polycrystalline silicon material ismelted. Note that, in a case of producing the silicon single crystalusing the polycrystalline silicon material according to the presentembodiment, a dopant may also be added when the polycrystalline siliconmaterial is melt in order to control characteristics of the siliconsingle crystal.

In the polycrystalline silicon material, since the effective acceptorelement concentration (the difference between the sum of the bulkconcentration and the surface concentration of the acceptor elements andthe sum of the bulk concentration and the surface concentration of thedonor elements) satisfies the above-mentioned relation, the conductiontype of the obtained silicon single crystal ingot is P-type, and theresistivity shows a value corresponding to the effective acceptorelement concentration of the polycrystalline silicon material.

In the present embodiment, since the concentrations of all the acceptorelements and the donor elements that affect the conduction type of thesilicon single crystal ingot are taken into consideration, an ingothaving a desired conduction type can be obtained, and an ingot having aconduction type different from the desired conduction type cannot beobtained.

Since the value calculated from the above-mentioned relation in thepolycrystalline silicon material corresponds to the resistivity in thesilicon single crystal ingot, the desired resistivity can be accuratelyachieved.

Although the embodiment of the present invention has been describedabove, the present invention is not limited to the above-mentionedembodiment, and may be modified in various modes within the scope of thepresent invention.

EXAMPLES

The present invention will be described below in more detail withreference to Examples. However, the present invention is not limited tothe following Examples.

Example 1

The polycrystalline silicon material was produced by the Siemens method.As the raw material gas, high-purity purified trichlorosilane andhydrogen were used.

Purified trichlorosilane produced by the method shown below was used.First, low-purity crude trichlorosilane was obtained by a reaction ofmetallurgical low-purity silicon called metallic silicon with hydrogenchloride and a reaction of the metallic silicon with tetrachlorosilaneand hydrogen.

B, Al, P, and As were included in the metallic silicon being a rawmaterial of the crude trichlorosilane at ratios of several hundred ppbto several hundred ppm. During the reaction of the metallic silicon withhydrogen chloride and the reaction of the metallic silicon withtetrachlorosilane and hydrogen, each dopant component was chlorinatedand get into the crude trichlorosilane.

Therefore, the obtained crude trichlorosilane was distilled and purifiedto separate and remove B, P, Al, and As in the crude trichlorosilane toobtain the purified trichlorosilane. As a result of measuring impurityconcentrations in the obtained purified trichlorosilane by ICP-MS, theB, P, Al, and As concentrations were each 1 [ppba] or less.

In a precipitating step of the polycrystalline silicon, the purifiedtrichlorosilane was supplied to a reaction vessel, and the unreactedtrichlorosilane was recovered, distilled and purified, and then suppliedagain into the reaction vessel. In a recovery and purification step oftrichlorosilane, dichlorosilane and SiH₃PH₃ having a boiling point closeto that of dichlorosilane were released to the outside of the system toreduce the P concentration in the recovered purified trichlorosilane.

The B, P, Al, and As concentrations in the recovered purifiedtrichlorosilane were measured by ICP-MS and, as a result, each werefound to be 1 [ppba] or less, and a dichlorosilane concentration wasmeasured by gas chromatography and, as a result, was found to be 800[ppmw].

As hydrogen, high-purity hydrogen having a dew point of −70° C. or lowerand recovered purified hydrogen obtained by purifying unreacted hydrogenrecovered after supplying the high-purity hydrogen to the reactionvessel were used. The high-purity hydrogen and the recovered purifiedhydrogen were mixed, and amounts of dopant components in hydrogenimmediately before the mixed hydrogen was supplied into the reactionvessel were measured by the impinger method. As a result, the B, Al, P,and As were all equal to or less than the lower limit of quantificationof 0.05 [ppbv].

The silicon core wire on which the polycrystalline silicon precipitateswas cut out from the polycrystalline silicon rod, and then the surfacelayer was eluted with a depth of 5 μm or more by etching withnitrohydrofluoric acid, so that the influence of heavy metalcontamination and dopant contamination received during cutting out waseliminated.

After the silicon core wire was energized and heated to approximately1000° C., a mixed gas of the above-mentioned purified trichlorosilaneand high-purity hydrogen was supplied into the reaction vessel toprecipitate the polycrystalline silicon. When a diameter of theprecipitated polycrystalline silicon was approximately 130 mm, thesupply of the mixed gas of the purified trichlorosilane and thehigh-purity hydrogen and the supply of the electric power wereterminated, and the precipitation reaction was terminated. Subsequently,a precipitate of the polycrystalline silicon was cut out to obtain apolycrystalline silicon rod.

The bulk dopant concentration of the obtained polycrystalline siliconrod was measured as follows. According to JIS H0615, the obtainedpolycrystalline silicon rod was cored so as to pass through a siliconcore wire portion, and a coring rod having a diameter of 19 mm wasobtained. The obtained coring rod was etched with nitrohydrofluoric acidto eliminate contamination during coring, and then single-crystallizedby the FZ method. In a long axis direction of the obtained singlecrystal, a specific resistance value was measured every 10 mm with afour-point probe resistance measuring device (RT-80 manufactured byNAPSON), and the average resistivity was calculated. The obtainedaverage resistivity was 2,200 [Ωcm].

Subsequently, a photoluminescence sample was cut out from a positionshowing a resistivity of 2,200 [Ωcm], polished, and etched to obtain amirror surface sample. The obtained mirror surface sample was immersedin liquid helium, and the amount of each dopant was measured with aphotoluminescence measuring device (PL-82IGA manufactured by SeishinTrading Co., Ltd.). As a result, the bulk B concentration was 2 [ppta],the bulk Al concentration was less than 1 [ppta], which was the lowerlimit of quantification, the bulk P concentration was 45 [ppta], and thebulk As concentration was 1 [ppta]. Therefore, the bulk acceptorconcentration was 2 [ppta] and the bulk donor concentration was 46[ppta]. Since the measurement result of the bulk Al concentration wasless than 1 [ppta] and no peak was confirmed, the bulk Al concentrationwas set to 0 [ppta] and the bulk acceptor concentration was calculated.

The remaining polycrystalline silicon rod after obtaining the sample forbulk dopant concentration measurement was crushed to obtain thepolycrystalline silicon crushed product (polycrystalline siliconnuggets).

The obtained polycrystalline silicon nuggets were sorted into threesizes by a sorting device, 30 kg of each sorted nugget was taken out,and a maximum length was measured with a caliper for each piece.

Small size nuggets S contained 93 wt % of nuggets having a maximumlength of 10 mm or more and 45 mm or less, and a median diameter of thenuggets S was 31 mm.

Middle size nuggets M contained 92 wt % of nuggets having a maximumlength of 20 mm or more and 70 mm or less, and a median diameter of thenuggets M was 51 mm.

Large size nuggets L contained 92 wt % of nuggets having a maximumlength of 60 mm or more and 100 mm or less, and a median diameter of thenuggets L was 83 mm.

The polycrystalline silicon nuggets selected according to size wereetched with a mixed acid of nitric acid for electronics industry andhydrofluoric acid for electronics industry to elute a surface layerportion, and surface contamination during crushing was eliminated. Sincereactivity of the nuggets to the etching solution was differentdepending on the size of the nuggets, an etching time was adjustedaccording to the size of the nuggets so that an etch-off amount was 3 mor more for any size of nuggets. Then, rinsing was performed withultrapure water having a specific resistance of 18 MΩcm to obtain threetypes of polycrystalline silicon materials having different sizes. Thebulk dopant concentrations of the three types of polycrystalline siliconmaterials were the same.

The surface dopant concentration of the obtained polycrystalline siliconmaterials was controlled as follows.

First, the polycrystalline silicon materials were transported to a cleanroom whose cleanliness was controlled by ISO14644-1 Class 6, placed in acontainer covered with a polyethylene sheet for each size, andair-dried.

For the polycrystalline silicon materials of all sizes, 150 kg ofpolycrystalline silicon was placed in the container, and a contact areabetween the polycrystalline silicon material and the polyethylene sheetin that case was 1.7 m². An amount of air supplied to thepolycrystalline silicon material during air drying was 40 m³/min.

As a result of measuring dopant concentrations in the supplied airaccording to a standard (JACA No. 35A) defined by the Japan Air CleaningAssociation, the B concentration was 31 ng/m³, and the Al concentration,the P concentration, and the As concentration were all equal to or lessthan 1 ng/cm³, which was the lower limit of quantification.

As the polyethylene sheet for protective covering, a linear short-chainbranched polyethylene (LLDPE) sheet not containing phosphoric acidesters as an antioxidant was used. This polyethylene sheet was immersedin a 5% dilute nitric acid aqueous solution and amounts of dopants on asurface of the polyethylene sheet were investigated by ICP-MS. As aresult, the Al concentration was 13 ng/cm², and the B concentration, theP concentration, and the As concentration were all 1 ng/cm², which wasthe lower limit of quantification.

In order to control the surface dopant concentration, an air-drying timewas set to 6 hours for the nuggets S, 15 hours for the nuggets M, and 36hours for the nuggets L. After the air drying was completed, 5 kg ofeach size was packed in a polyethylene packaging bag, and an opening ofthe packaging bag was sealed with a heat seal. The polyethylenepackaging bag was filled with a 5% dilute nitric acid aqueous solution,and an extract was measured by ICP-MS to investigate amounts of dopantson a contact surface of the packaging bag with the nuggets. As a result,the B concentration, the Al concentration, the P concentration, and theAs concentration were all 1 ng/cm², which was the lower limit ofquantification.

As a sample for measuring the surface dopant concentration, 5 kg of thepolycrystalline silicon nuggets were extracted from the sealedpolyethylene packaging bag for each size. The surface dopantconcentration was measured as follows.

After mannitol was added to high-purity nitric acid and high-purityhydrofluoric acid for dissolution, approximately 100 g of thepolycrystalline silicon nuggets were taken out of the bag with PFAtweezers and immersed in nitrohydrofluoric acid. After dissolving 20 μmto 30 μm of surfaces of the nuggets, the polycrystalline silicon nuggetswere taken out from the nitrohydrofluoric acid.

After taking out the polycrystalline silicon, the nitrohydrofluoric acidwas heated to be evaporated to dryness, and then a residue was recoveredand dissolved in 10 ml of nitric acid, and each surface dopant elementwas quantified by a double-focusing ICP-MS (Element 2 manufactured byThermo Fischer). From the obtained measured values, the concentration ofeach surface dopant element based on the number of silicon contained inthe polycrystalline silicon was calculated using the equation shownbelow. Results are shown in Table 1.

$\begin{matrix}{Q = {\frac{\left( {C - C_{b}} \right)}{W}L\frac{M_{Si}}{M}}} & \left\lbrack {{Math}.\mspace{14mu} 5} \right\rbrack\end{matrix}$

Q: concentration [ppta] of each surface dopant element

C: measured value [ng/L]

Cb: operation blank value [ng/L]

W: weight [g] of polycrystalline silicon sample

L: nitric acid amount [L] used to recover residue

M_(Si): atomic weight of silicon

M: atomic weight of target dopant (B, Al, P, As)

For the surface As concentration, approximately 100 g of thepolycrystalline silicon nuggets were filled in a fluororesin containerincluding an outlet for collecting impurity gas on a lid, and then 200mL of high-purity hydrofluoric acid was poured from the outlet toimmerse the polycrystalline silicon nuggets. A measured value wasobtained by quantifying a gas containing an As component generated bythis operation with a double-focusing ICP-MS equipped with a gas sampleintroduction system (manufactured by J-Science).

TABLE 1 Surface dopant concentration Surface donor Surface acceptorconcentration [ppta] concentration [ppta] Cd2 Ca2 Sample P As B Al[ppta] [ppta] Nuggets S 28 <1 70 16 28 86 Nuggets M 27 <1 76 12 27 88Nuggets L 26 <1 72 14 26 86

Silicon single crystal was grown by the CZ method using the obtainedpolycrystalline silicon nuggets.

In order to prevent contamination when filling a quartz crucible withthe polycrystalline silicon, after performing an outside air treatmentwith an air washer, air that has passed through a low boron glass fiberHEPA filter was supplied to the clean room, and the dopant concentrationin the air was measured by the impinger method. As a result, the Bconcentration was 2 ng/m³, and the Al concentration, the Pconcentration, and the As concentration were all 1 ng/m³ or less, whichwas the lower limit of quantification.

The sealed polyethylene packaging bag was opened in the clean room whosecleanliness is controlled by ISO14644-1 Class 6, the quartz crucible wasfilled with 150 kg of the polycrystalline silicon nuggets, and thensilicon single crystal having a straight body length of 1600 mm and adiameter of 200 mm was obtained by the CZ method.

The specific resistance values between the top side (solidificationrate: 0.05) and the tail side (solidification rate: 0.84) of thestraight body of the obtained silicon single crystal were measured withthe four-ended needle resistance measuring device, as a result, theresults shown in Table 2 were obtained.

TABLE 2 Polycrystalline silicon material Silicon single crystal Raw Topside Tail side Sample material Dopant concentration [ppta] ConductionResistivity Conduction Resistivity No. used Cd1 Cd2 Ca1 Ca2 C* type[Ωcm] type [Ωcm] 1 Nuggets S 46 28 2 86 14 P 18800 P 17900 2 Nuggets M46 27 2 88 17 P 13800 P 13000 3 Nuggets L 46 26 2 86 16 P 15900 P 15200C* = (Ca1 + Ca2) − (Cd1 + Cd2)

It was confirmed from Table 2 that, by controlling the bulk dopantconcentration and the surface dopant concentration in thepolycrystalline silicon material to satisfy the above relation, thesilicon single crystal having a desired conduction type of p-type can beobtained.

In addition, it was confirmed that a magnitude relation amongresistivities of Sample Nos. 1 to 3 corresponds to a magnitude relationamong effective acceptor element concentrations (C*) of polycrystallinesilicon materials used for producing Sample Nos. 1 to 3. Therefore, bysetting the effective acceptor element concentration of thepolycrystalline silicon material to a predetermined value, the desiredresistivity can be accurately achieved.

Example 2

The synthesis, distillation and purification, recovery and purificationof trichlorosilane, and the precipitation of polycrystalline siliconwere carried out in a similar manner to Example 1. The concentration ofdichlorosilane in the recovered purified trichlorosilane in this casewas measured by gas chromatography and, as a result, was found to be 900ppmw.

The polycrystalline silicon obtained after the precipitation wasanalyzed by the same method as in Example 1. The average resistivity was1,700 [Ωcm]. The bulk B concentration was 2 [ppta], and the bulk Alconcentration was less than 1 [ppta], which was the lower limit ofquantification. The bulk acceptor concentration was set to 2 [ppta],regarding the bulk Al concentration as 0 [ppta]. The bulk Pconcentration was 51 [ppta] and the bulk As concentration was 3 [ppta].Therefore, the bulk donor concentration was 54 [ppta].

Subsequently, in the same manner as in Example 1, the obtainedpolycrystalline silicon rod was crushed, sorted into nuggets S, nuggetsM, and nuggets L, and then etched to obtain the polycrystalline siliconmaterial.

30 kg of each size of nuggets was extracted and the maximum length ismeasured for each piece. As a result, the nuggets S contained 91 wt % ofthe nuggets having a maximum length of 10 mm or more and 45 mm or less,and the median diameter of the nuggets S was 29 mm. The nuggets Mcontained 94 wt % of the nuggets having a maximum length of 20 mm ormore and 70 mm or less, and the median diameter of the nuggets M was 51mm The nuggets L contained 94 wt % of the nuggets having a maximumlength of 60 mm or more and 100 mm or less, and the median diameter ofthe nuggets L was 81 mm.

The polycrystalline silicon material obtained by etching was placed inthe container on which the polyethylene sheet was covered for each sizeand air-dried, in the same manner as in Example 1. In this case, theweight of the polycrystalline silicon material placed in the containerwas 150 kg for each size. The contact area between the polycrystallinesilicon material and the polyethylene sheet was 1.7 m². The amount ofair supplied to the polycrystalline silicon material during the airdrying was 40 m³/min. The dopant concentration in the supplied air wasmeasured. As a result, the B concentration was 57 ng/m³, and the Alconcentration, the P concentration, and the As concentration were allequal to or less than 1 ng/m³, which was the lower limit ofquantification.

As the polyethylene sheet for protective covering, the LLDPE sheetcontaining phosphoric acid esters was used. the amounts of dopants onthe surface of this sheet were measured. As a result, the Pconcentration was 15 ng/cm², the Al concentration was 4 ng/cm², and theB concentration and As concentration were both 1 ng/cm², which was thelower limit of quantification.

The air-drying time of the nuggets was 3 hours for the nugget S, 7 hoursfor the nuggets M, and 18 hours for the nuggets L. After the air drying,5 kg of each size was packed in the polyethylene packaging bag, and theopening of the packaging bag was sealed with heat seal.

5 kg of the polycrystalline silicon nuggets were extracted for each sizefrom the sealed polyethylene packaging bag, and each surface dopantconcentration was calculated in the same manner as in Example 1. Resultsare shown in Table 3.

TABLE 3 Surface dopant concentration Surface donor Surface acceptorconcentration [ppta] concentration [ppta] Cd2 Ca2 Sample P As B Al[ppta] [ppta] Nuggets S 11 <1 65 5 11 70 Nuggets M 12 <1 66 4 12 70Nuggets L 11 <1 65 3 11 68

Using the obtained polycrystalline silicon nugget, silicon singlecrystal having a straight body length of 1600 mm and a diameter of 200mm was obtained by the CZ method in the same manner as in Example 1.

In the same manner as in Example 1, the conduction type and the specificresistance value of the obtained silicon single crystal were measured.Results are shown in Table 4.

TABLE 4 Polycrystalline silicon material Silicon single crystal Raw Topside Tail side Sample material Dopant concentration [ppta] ConductionResistivity Conduction Resistivity No. used Cd1 Cd2 Ca1 Ca2 C* type[Ωcm] type [Ωcm] 4 Nuggets S 54 11 2 70 7 P 29200 P 27800 5 Nuggets M 5412 2 70 6 P 35100 P 33300 6 Nuggets L 54 11 2 68 5 P 42300 P 40400 C* =(Ca1 + Ca2) − (Cd1 + Cd2)

It was confirmed from Table 4 that, by controlling the relation betweenthe bulk dopant concentration and the surface dopant concentration inthe polycrystalline silicon material within the above range, siliconsingle crystal having a desired conduction type and a desiredresistivity can be obtained, as with Example 1.

Example 3

The synthesis, distillation and purification, recovery and purificationof trichlorosilane, and the precipitation of polycrystalline siliconwere carried out in a similar manner to Example 1. The concentration ofdichlorosilane in the recovered purified trichlorosilane in this casewas measured by gas chromatography and, as a result, was found to be 200ppmw.

The polycrystalline silicon obtained after the precipitation wasanalyzed by the same method as in Example 1. The average resistivity was8,300 [Ωcm]. The bulk B concentration was 2 [ppta], and the bulk Alconcentration was less than 1 [ppta], which was the lower limit ofquantification. The bulk acceptor concentration was set to 2 [ppta],regarding the bulk Al concentration as 0 [ppta]. The bulk Pconcentration was 11 [ppta] and the bulk As concentration was 2 [ppta].Therefore, the bulk donor concentration was 13 [ppta].

Subsequently, in the same manner as in Example 1, the obtainedpolycrystalline silicon rod was crushed, sorted into nuggets S, nuggetsM, and nuggets L, and then etched to obtain the polycrystalline siliconmaterial.

30 kg of each size of the nuggets is extracted and the maximum lengthwas measured for each piece. As a result, the nuggets S contained 92 wt% of the nuggets having a maximum length of 10 mm or more and 45 mm orless, and the median diameter of the nuggets S was 31 mm. The nuggets Mcontained 93 wt % of the nuggets having a maximum length of 20 mm ormore and 70 mm or less, and the median diameter of the nuggets M was 50mm. The nuggets L contained 92 wt % of the nuggets having a maximumlength of 60 mm or more and 100 mm or less, and the median diameter ofthe nuggets L was 81 mm.

The polycrystalline silicon material obtained by etching was placed inthe container on which the polyethylene sheet was covered for each size,and air-dried, in the same manner as in Example 1. In this case, theweight of the polycrystalline silicon material placed in the containerwas 150 kg for each size. The contact area between the polycrystallinesilicon material and the polyethylene sheet was 1.7 m². The amount ofair supplied to the polycrystalline silicon material during the airdrying was 40 m³/min. the dopant concentration in the supplied air ismeasured. As a result, the B concentration was 30 ng/m³, and the Alconcentration, the P concentration, and the As concentration were allequal to or less than 1 ng/m³, which was the lower limit ofquantification.

As the polyethylene sheet for protective covering, the LDPE sheet notcontaining phosphoric acid esters was used. the amounts of dopants onthe surface of this sheet were measured. As a result, the Alconcentration was 2 ng/cm², the B concentration, the P concentration,and the As concentration were all 1 ng/cm², which was the lower limit ofquantification.

The air-drying time of the nuggets was 3 hours for the nugget S, 7 hoursfor the nuggets M, and 18 hours for the nuggets L. After the air drying,5 kg of each size was packed in the polyethylene packaging bag, and theopening of the packaging bag was sealed with heat seal. 5 kg of thepolycrystalline silicon nuggets were extracted for each size from thesealed polyethylene packaging bag, and each surface dopant concentrationwas calculated in the same manner as in Example 1. Results are shown inTable 5.

TABLE 5 Surface dopant concentration Surface donor Surface acceptorconcentration [ppta] concentration [ppta] Cd2 Ca2 Sample P As B Al[ppta] [ppta] Nuggets S 1 <1 34 1 1 35 Nuggets M 1 <1 32 1 1 33 NuggetsL 1 <1 35 1 1 36

Using the obtained polycrystalline silicon nugget, silicon singlecrystal having a straight body length of 1600 mm and a diameter of 200mm was obtained by the CZ method in the same manner as in Example 1.

In the same manner as in Example 1, the conduction type and the specificresistance value of the obtained silicon single crystal were measured.Results are shown in Table 6.

TABLE 6 Polycrystalline silicon material Silicon single crystal Raw Topside Tail side Sample material Dopant concentration [ppta] ConductionResistivity Conduction Resistivity No. used Cd1 Cd2 Ca1 Ca2 C* type[Ωcm] type [Ωcm] 7 Nuggets S 13 1 2 35 23 P 11200 P 10700 8 Nuggets M 131 2 33 21 P 11400 P 10900 9 Nuggets L 13 1 2 36 24 P 10700 P 10200 C* =(Ca1 + Ca2) − (Cd1 + Cd2)

It was confirmed from Table 6 that, by controlling the relation betweenthe bulk dopant concentration and the surface dopant concentration inthe polycrystalline silicon material within the above range, siliconsingle crystal having a desired conduction type and a desiredresistivity can be obtained, as with Example 1.

Comparative Example 1

The synthesis, distillation and purification, recovery and purificationof trichlorosilane, and the precipitation of polycrystalline siliconwere carried out in a similar manner to Example 1. The concentration ofdichlorosilane in the recovered purified trichlorosilane in this casewas measured by gas chromatography and, as a result, was found to be 150ppmw.

The polycrystalline silicon obtained after the precipitation wasanalyzed by the same method as in Example 1. The average resistivity was10,100 [Ωcm]. The bulk B concentration was 2 [ppta], and the bulk Alconcentration was less than 1 [ppta], which was the lower limit ofquantification. The bulk acceptor concentration was set to 2 [ppta],regarding the bulk Al concentration as 0 [ppta]. The bulk Pconcentration was 9 [ppta] and the bulk As concentration was 1 [ppta].Therefore, the bulk donor concentration was 10 [ppta].

Subsequently, in the same manner as in Example 1, the obtainedpolycrystalline silicon rod was crushed, sorted into nuggets S, nuggetsM, and nuggets L, and then etched to obtain the polycrystalline siliconmaterial.

30 kg of each size of nuggets was extracted and the maximum length wasmeasured for each piece, the nuggets S contained 92 wt % of the nuggetshaving a maximum length of 10 mm or more and 45 mm or less, and themedian diameter of the nuggets S was 30 mm. The nuggets M contained 92wt % of the nuggets having a maximum length of 20 mm or more and 70 mmor less, and the median diameter of the nuggets M was 49 mm. The nuggetsL contained 94 wt % of the nuggets having a maximum length of 60 mm ormore and 100 mm or less, and the median diameter of the nuggets L was 81mm.

The polycrystalline silicon material obtained by etching was placed inthe container on which the polyethylene sheet was covered for each size,and air-dried, in the same manner as in Example 1. In this case, theweight of the polycrystalline silicon material placed in the containerwas 150 kg for each size. The contact area between the polycrystallinesilicon material and the polyethylene sheet was 1.7 m². The amount ofair supplied to the polycrystalline silicon material during the airdrying was 40 m³/min. The dopant concentration in the supplied air wasmeasured. As a result, the B concentration was 14 ng/m³, and the Alconcentration, the P concentration, and the As concentration were allequal to or less than 1 ng/m³, which was the lower limit ofquantification.

As the polyethylene sheet for protective covering, the LDPE sheet notcontaining phosphoric acid esters was used. the amounts of dopants onthe surface of this sheet were measured. As a result, the Alconcentration was 2 ng/cm², the B concentration, the P concentration,and the As concentration were all 1 ng/cm², which was the lower limit ofquantification.

Similar to Example 1, the air-drying time of the nuggets was 2 hours forthe nugget S, 4 hours for the nuggets M, and 12 hours for the nuggets L.After the air drying, 5 kg of each size was packed in the polyethylenepackaging bag, and the opening of the packaging bag was sealed with heatseal.

5 kg of the polycrystalline silicon nuggets were extracted for each sizefrom the sealed polyethylene packaging bag, and each surface dopantconcentration was calculated in the same manner as in Example 1. Resultsare shown in Table 7.

TABLE 7 Surface dopant concentration Surface donor Surface acceptorconcentration [ppta] concentration [ppta] Cd2 Ca2 Sample P As B Al[ppta] [ppta] Nuggets S 1 <1 12 1 1 13 Nuggets M 1 <1 9 1 1 10 Nuggets L1 <1 11 <1 1 11

Using the obtained polycrystalline silicon nugget, silicon singlecrystal having a straight body length of 1600 mm and a diameter of 200mm was obtained by the CZ method in the same manner as in Example 1.

In the same manner as in Example 1, the conduction type and the specificresistance value of the obtained single crystal silicon were measured.Results are shown in Table 8.

TABLE 8 Polycrystalline silicon material Silicon single crystal Raw Topside Tail side Sample material Dopant concentration [ppta] ConductionResistivity Conduction Resistivity No. used Cd1 Cd2 Ca1 Ca2 C* type[Ωcm] type [Ωcm] 10 Nuggets S 10 1 2 13 4 N 63000 P 65700 11 Nuggets M10 1 2 10 1 N 32500 P 86800 12 Nuggets L 10 1 2 11 2 N 46000 P 75300 C*= (Ca1 + Ca2) − (Cd1 + Cd2)

From Table 8, unlike Examples 1 to 3, in the silicon single crystalingots of Sample Nos. 10 to 12, the conduction type on the top side wasn-type opposite to a desired conduction type, and was inverted to p-typein the middle of the ingots.

Therefore, it was confirmed that even if both the bulk dopantconcentration and the surface dopant concentration are lowered tominimize contamination of the polycrystalline silicon material, if therelation between the bulk dopant concentration and the surface dopantconcentration is not controlled within a predetermined range, theconduction type is inverted in the middle of the silicon single crystalingot. As a result, it was confirmed that a yield of the silicon singlecrystal is greatly reduced.

A straight body length at a position where the conduction type wasP-type and the resistivity was 10,000 [Ωcm] or more was 600 mm in SampleNo. 10, 150 mm in Sample No. 11, and 300 mm in Sample No. 12.

Comparative Example 2

The synthesis, distillation and purification, recovery and purificationof trichlorosilane, and the precipitation of polycrystalline siliconwere carried out in a similar manner to Example 1. The concentration ofdichlorosilane in the recovered purified trichlorosilane in this casewas measured by gas chromatography and, as a result, was found to be 200ppmw.

The polycrystalline silicon obtained after the precipitation wasanalyzed by the same method as in Example 1. The average resistivity was7,600 [Ωcm]. The bulk B concentration was 3 [ppta], and the bulk Alconcentration was less than 1 [ppta], which was the lower limit ofquantification. The bulk acceptor concentration was set to 3 [ppta],regarding the bulk Al concentration as 0 [ppta]. The bulk Pconcentration was 12 [ppta] and the bulk As concentration was 1 [ppta].Therefore, the bulk donor concentration was 13 [ppta].

Subsequently, in the same manner as in Example 1, the obtainedpolycrystalline silicon rod was crushed, sorted into nuggets S, nuggetsM, and nuggets L, and then etched to obtain the polycrystalline siliconmaterial.

30 kg of each size of nuggets was extracted and the maximum length wasmeasured for each piece, the nuggets S contained 94 wt % of the nuggetshaving a maximum length of 10 mm or more and 45 mm or less, and themedian diameter of the nuggets S was 29 mm. The nuggets M contained 92wt % of the nuggets having a maximum length of 20 mm or more and 70 mmor less, and the median diameter of the nuggets M was 49 mm. The nuggetsL contained 94 wt % of the nuggets having a maximum length of 60 mm ormore and 100 mm or less, and the median diameter of the nuggets L was 79mm.

The polycrystalline silicon material obtained by etching was placed inthe container on which the polyethylene sheet was covered for each sizeand air-dried, in the same manner as in Example 1. In this case, theweight of the polycrystalline silicon material placed in the containerwas 150 kg for each size. The contact area between the polycrystallinesilicon material and the polyethylene sheet was 1.7 m². The amount ofair supplied to the polycrystalline silicon material during theair-drying was 40 m³/min. The dopant concentration in the supplied airwas measured. As a result, the B concentration was 19 ng/m³, and the Alconcentration, the P concentration, and the As concentration were allequal to or less 1 ng/m³, which was the lower limit of quantification.

As the polyethylene sheet for protective covering, the LLDPE sheetcontaining phosphoric acid esters was used. The amounts of dopants onthe surface of this sheet were measured. As a result, the Pconcentration was 15 ng/cm², the Al concentration was 2 ng/cm², and theB concentration and the As concentration were both 1 ng/cm², which wasthe lower limit of quantification.

Similar to Example 1, the air-drying time of the nuggets was 6 hours forthe nugget S, 15 hours for the nuggets M, and 36 hours for the nuggetsL. After the air drying, 5 kg of each size was packed in thepolyethylene packaging bag, and the opening of the packaging bag wassealed with heat seal.

5 kg of the polycrystalline silicon nuggets were extracted for each sizefrom the sealed polyethylene packaging bag, and each surface dopantconcentration was calculated in the same manner as in Example 1. Resultsare shown in Table 9.

TABLE 9 Surface dopant concentration Surface donor Surface acceptorconcentration [ppta] concentration [ppta] Cd2 Ca2 Sample P As B Al[ppta] [ppta] Nuggets S 10 <1 43 4 10 47 Nuggets M 12 <1 48 3 12 51Nuggets L 10 <1 45 6 10 51

Using the obtained polycrystalline silicon nugget, silicon singlecrystal having a straight body length of 1600 mm and a diameter of 200mm was obtained by the CZ method in the same manner as in Example 1.

In the same manner as in Example 1, the conduction type and the specificresistance value of the obtained silicon single crystal were measured.Results are shown in Table 10.

TABLE 10 Polycrystalline silicon material Silicon single crystal Raw Topside Tail side Sample material Dopant concentration [ppta] ConductionResistivity Conduction Resistivity No. used Cd1 Cd2 Ca1 Ca2 C* type[Ωcm] type [Ωcm] 13 Nuggets S 13 10 3 47 27 P 10400 P 9700 14 Nuggets M13 12 3 51 29 P 9900 P 9500 15 Nuggets L 13 10 3 51 31 P 9200 P 8700 C*= (Ca1 + Ca2) − (Cd1 + Cd2)

From Table 10, for the silicon single crystal ingot of Sample No. 13,the conduction type was p-type, and the resistivity on the top side was10,000 [Ωcm] or more, but it was less than 10,000 [Ωcm] after a positionwhere the straight body length was 750 mm from the top side. For thesilicon single crystal ingots of Sample No. 14 and Sample No. 15,although the conduction type was p-type, the resistivity was kept at10,000 [Ωcm] or less from the top side.

Therefore, it was confirmed that when the relation between the bulkdopant concentration and the surface dopant concentration is larger thanthe above range, the resistivity of the silicon single crystal ingot issmaller than 10,000 [Ωcm].

1. A polycrystalline silicon material for producing silicon singlecrystal, comprising: a plurality of polycrystalline silicon chunks,wherein assuming that a total concentration of donor elements presentinside a bulk body of the polycrystalline silicon material is Cd1[ppta], a total concentration of acceptor elements present inside thebulk body of the polycrystalline silicon material is Ca1 [ppta], a totalconcentration of the donor elements present on a surface of thepolycrystalline silicon material is Cd2 [ppta], and a totalconcentration of the acceptor elements present on the surface of thepolycrystalline silicon material is Ca2 [ppta], wherein Cd1, Ca1, Cd2,and Ca2 satisfy a relation of 5 [ppta]≤(Ca1+Ca2)−(Cd1+Cd2)≤26 [ppta]. 2.The polycrystalline silicon material according to claim 1, whereinassuming that a total weight of the polycrystalline silicon chunkscontained in the polycrystalline silicon material is 100%, a weight ofpolycrystalline silicon chunks having a maximum length of 10 mm or moreand 45 mm or less is 90% or more.
 3. The polycrystalline siliconmaterial according to claim 1, wherein assuming that a total weight ofthe polycrystalline silicon chunks contained in the polycrystallinesilicon material is 100%, a weight of polycrystalline silicon chunkshaving a maximum length of 20 mm or more and 70 mm or less is 90% ormore.
 4. The polycrystalline silicon material according to claim 1,wherein assuming that a total weight of the polycrystalline siliconchunks contained in the polycrystalline silicon material is 100%, aweight of polycrystalline silicon chunks having a maximum length of 60mm or more and 100 mm or less is 90% or more.